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M12L16161A-7TIG2Q

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

M12L16161A-7TIG2Q datasheet by ESMT (Elite Semiconductor Microelectronics Technology).

This datasheet includes multiple variants, all published together in a single manufacturer document.

M12L16161A-7TIG2Q datasheet preview

M12L16161A-7TIG2Q Datasheet Details

Part number M12L16161A-7TIG2Q
Datasheet M12L16161A-7TIG2Q M12L16161A Datasheet (PDF)
File Size 702.53 KB
Manufacturer ESMT (Elite Semiconductor Microelectronics Technology)
Description 512K x 16Bit x 2Banks Synchronous DRAM
M12L16161A-7TIG2Q page 2 M12L16161A-7TIG2Q page 3

M12L16161A-7TIG2Q Overview

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. z Burst Read Single-bit Write operation z DQM.

M12L16161A-7TIG2Q Key Features

  • CAS Latency (2 & 3 )
  • Burst Length (1, 2, 4, 8 & full page)
  • Burst Type (Sequential & Interleave) z All inputs are sampled at the positive going edge of the system clock
ESMT (Elite Semiconductor Microelectronics Technology) logo - Manufacturer

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