M12L16161A-5TIG2Q
M12L16161A-5TIG2Q is 512K x 16Bit x 2Banks Synchronous DRAM manufactured by Elite Semiconductor Microelectronics Technology.
- Part of the M12L16161A comparator family.
- Part of the M12L16161A comparator family.
ESMT
SDRAM
M12L16161A (2Q)
Operation Temperature Condition -40°C~85°C
512K x 16Bit x 2Banks Synchronous DRAM
Features
GENERAL DESCRIPTION z JEDEC standard 3.3V power supply z LVTTL patible with multiplexed address z Dual banks operation z MRS cycle with address key programs
- CAS Latency (2 & 3 )
- Burst Length (1, 2, 4, 8 & full page)
- Burst Type (Sequential & Interleave) z All inputs are sampled at the positive going edge of the system clock
The M12L16161A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. z Burst Read Single-bit Write operation z...
