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M12L16161A-5TIG2Q Datasheet 512k X 16bit X 2banks Synchronous Dram

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

Overview: ESMT SDRAM M12L16161A (2Q) Operation Temperature Condition -40°C~85°C 512K x 16Bit x 2Banks Synchronous.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

z JEDEC standard 3.3V power supply z LVTTL patible with multiplexed address z Dual banks operation z MRS cycle with address key programs - CAS Latency (2 & 3 ) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave) z All inputs are sampled at the positive going edge of the system clock The M12L16161A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
M12L16161A-5TG2R 512K x 16Bit x 2Banks Synchronous DRAM
M12L16161A-7TG2R 512K x 16Bit x 2Banks Synchronous DRAM
M12L16161A-7TIG2Q 512K x 16Bit x 2Banks Synchronous DRAM
M12L128168A-5BG 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5BG2N 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5BG2S 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5BVAG2N Synchronous DRAM
M12L128168A-5BVAG2S 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5BVG2N Synchronous DRAM
M12L128168A-5BVG2S 2M x 16 Bit x 4 Banks Synchronous DRAM

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