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M14D5121632A-2.5BBG2A - DDR-II SDRAM

Download the M14D5121632A-2.5BBG2A datasheet PDF. This datasheet also covers the M14D5121632A-1.5BG2A variant, as both devices belong to the same ddr-ii sdram family and are provided as variant models within a single manufacturer datasheet.

General Description

Pin Name A0~A12, BA0,BA1 DQ0~DQ15 RAS CAS WE VSS VDD DQS, DQS (LDQS, LDQS UDQS, UDQS) ODT NC Function Address inputs - Row address A0~A12 - Column address A0~A9 A10/AP : Auto Precharge BA0, BA1 : Bank selects (4 Banks) Data-in/Data-out Command input Command input Command input Ground Power Pin Na

Key Features

  • JEDEC Standard.
  • VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V.
  • Internal pipelined double-data-rate architecture; two data access per clock cycle.
  • Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.
  • On-chip DLL.
  • Differential clock inputs (CLK and CLK ).
  • DLL aligns DQ and DQS transition with CLK transition.
  • Quad bank operation.
  • CAS Latency : 3, 4, 5, 6, 7, 8, 9.
  • Additive Latency: 0, 1, 2, 3, 4,.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M14D5121632A-1.5BG2A-ESMT.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
M14D5121632A-2.5BBG2M 8M x 16 Bit x 4 Banks DDR II SDRAM
M14D5121632A-2.5BBG2S 8M x 16 Bit x 4 Banks DDR II SDRAM
M14D5121632A-2.5BG2A DDR-II SDRAM
M14D5121632A-2.5BG2M 8M x 16 Bit x 4 Banks DDR II SDRAM
M14D5121632A-2.5BG2S 8M x 16 Bit x 4 Banks DDR II SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ESMT M14D5121632A (2A) DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features  JEDEC Standard  VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V  Internal pipelined double-data-rate architecture; two data access per clock cycle  Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.