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2N5226 (SILICON)
PNP SILICON ANNULAR TRANSISTOR
... designed for general purpose amplifier applications and for complementary circuitry with the 2N5225.
• Collector·Emitter Breakdown Voltage -
BVCEO = 25 Volts (Min) @ IC = 10 mAdc
• Current Gain Specified at lOrnA and 50 rnA • Coli ector· Base Capacitance -
Ccb = 20 pF (Max) @ VCB = 5.0 Vdc
PNP SILICON AMPLIFIER TRANSISTOR
'MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage EmItter-Base Voltage
Collector Current - Continuous
Total Power Dissipation @ T A = 2SoC Derate above 25°C
Total Power Dlssipation@Tc'" 25°C Derate above 25°C
Operating and Storage JunctIon Temperature Range
Symbol VCEO VCB VEB
IC
Po
Po
T J,T stQ
Value
25 25 4.0 500 350 2.8 1.0 8.