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2N5226 - PNP SILICON ANNULAR TRANSISTOR

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Part number 2N5226
Manufacturer Unknown Manufacturer
File Size 99.05 KB
Description PNP SILICON ANNULAR TRANSISTOR
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2N5226 (SILICON) PNP SILICON ANNULAR TRANSISTOR ... designed for general purpose amplifier applications and for complementary circuitry with the 2N5225. • Collector·Emitter Breakdown Voltage - BVCEO = 25 Volts (Min) @ IC = 10 mAdc • Current Gain Specified at lOrnA and 50 rnA • Coli ector· Base Capacitance - Ccb = 20 pF (Max) @ VCB = 5.0 Vdc PNP SILICON AMPLIFIER TRANSISTOR 'MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage EmItter-Base Voltage Collector Current - Continuous Total Power Dissipation @ T A = 2SoC Derate above 25°C Total Power Dlssipation@Tc'" 25°C Derate above 25°C Operating and Storage JunctIon Temperature Range Symbol VCEO VCB VEB IC Po Po T J,T stQ Value 25 25 4.0 500 350 2.8 1.0 8.
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