2N5223
2N5223 is NPN SILICON AMPLIFIER TRANSISTOR manufactured by Unknown Manufacturer.
2N5223 (SILICON)
NPN SILICON AMPLIFIER TRANSISTOR
- .. designed for low-level. small-signal. general-purpose amplifier applications.
- High Current-Gain-Bandwidth Product f T = 150 MHz (Min) @ IC = 10 m Adc-
- Collector-Emitter Saturation Voltage VCE(sat) = 0.7 Vdc (Max) @ IC = 10 m Adc
- Collector-Base Capacitance Ccb= 4.0 p F (Max)@ VCB = 10 Vdc
NPN SILICON AMPLIFIER TRANSISTOR
"MAXIMUM RATINGS Rating
Collector-Emitter Voltage Collector-Ba.. Voltage
Emitter-Base Voltage
Collector Current
- Continuous Total Power Dissipation @ T A "" 25°C
Derate above 2SOC Total Power Dissipation @ TC = 25°C
Darato above 2s OC Operating Bnd Storage Junction
Temperature Range
Symbol VCEO VCB VEB
Po
Po
TJ.Tstg
Value 20 25
3.0 100
350 2.8 1.0 8.0 -55 to +150
Unit Vdc Vdc Vdc m Ade m W m W/o C
Watt m WJOC
°c
"THERMAL CHARACTERISTICS Characteristic
Thermal Resistance. Junction to Ambient Thermal Resistance, Junction to Case
Symbol R8JA(1)
R8JC
Max 357...
