2N5222
2N5222 is NPN SILICON ANNULAR TRANSISTOR manufactured by Unknown Manufacturer.
2N5222 (SILICON)
NPN SILICON ANNULAR TRANSISTOR
... designed for RF amplifier, mixer, and video IF applications.
- High Current- Gain-Bandwidth Product f T = 450 MHz (Min) @ IC = 4.0 m Ade
- Coliector- Emitter Saturation Voltage VCE = 1.0 Vdc (Max) @ IC = 4.0 m Ade
- Low Collector- Base Capacitance Ccb= 1.3p F (Max)@VCB=10Vdc
NPN SILICON AMPLIFIER TRANSISTOR
- MAXIMUM RATINGS Rating
Coilector- Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Total Power Dissipation @ TA == 2So C Derate above 2So C
Total Power Dissipation @ TC = 25°C Derate above 2s OC
Operating and Storage Junction Temperature Range
Symbol VCEO Vce VEe
Po
Po
TJ,Tstg
Value
15 20 2.0
50 350 2.8 1.0 8.0 -55 to +150
Unit Vdc Vdc Vdc m Ade m W m W/o C
Watt m WPC
°c
THERMAL CHARACTERISTICS Characteristic
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case
Symbol Re JA(1)
Re...
