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2N5222 (SILICON)
NPN SILICON ANNULAR TRANSISTOR
... designed for RF amplifier, mixer, and video IF applications.
• High Current· Gain-Bandwidth Product fT = 450 MHz (Min) @ IC = 4.0 mAde
• Coliector·Emitter Saturation VoltageVCE = 1.0 Vdc (Max) @ IC = 4.0 mAde
• Low Collector· Base Capacitance Ccb= 1.3pF (Max)@VCB=10Vdc
NPN SILICON AMPLIFIER TRANSISTOR
*MAXIMUM RATINGS Rating
Coilector·Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Power Dissipation @ TA == 2SoC Derate above 2SoC
Total Power Dissipation @ TC = 25°C Derate above 2sOC
Operating and Storage Junction Temperature Range
Symbol VCEO Vce VEe
IC
Po
Po
TJ,Tstg
Value
15 20 2.0
50 350 2.8 1.0 8.
2N5222 Datasheet
