2N5225
2N5225 is NPN SILICON ANNULAR TRANSISTOR manufactured by Unknown Manufacturer.
2N5225 (SILICON)
NPN SILICON ANNULAR TRANSISTOR
... designed for general purpose amplifier applications and for plementary circuitry with types 2N5226.
- Collector-Emitter Breakdown Voltage BVCEO = 25 Volts (Mini
- Current Gain Specified at 10 rn A and 50 rn A
- Collector- Base Capacitance
- Ccb = 20 p F (Maxi
NPN SILICON AMPLIFIER
TRANSISTOR
'MAXIMUM RATINGS Rating
Col/ector- Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous Total Power Dissipation @ T A '= 2So C
Derate above 2So C Total Power Dissipation @ TC == 2So C
Derate above 2So C Operating and Storage Junction
Temperature Range
Symbol VCEO VCS VES
IC PD
TJ,Tst9
Value
25 25 4.0 200
350 2.8 1.0 8.0 -55 to +150
Unit Vdc
Vdc Vdc m Ade m W m W/o C
Watt m WI"C
°c
'THERMAL CHARACTERISTICS Characteristic
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to...
