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2N5225 (SILICON)
NPN SILICON ANNULAR TRANSISTOR
... designed for general purpose amplifier applications and for complementary circuitry with types 2N5226.
• Collector-Emitter Breakdown Voltage BVCEO = 25 Volts (Mini
• Current Gain Specified at 10 rnA and 50 rnA • Collector· Base Capacitance - Ccb = 20 pF (Maxi
NPN SILICON AMPLIFIER
TRANSISTOR
'MAXIMUM RATINGS Rating
Col/ector·Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous Total Power Dissipation @ T A '= 2SoC
Derate above 2SoC Total Power Dissipation @ TC == 2SoC
Derate above 2SoC Operating and Storage Junction
Temperature Range
Symbol VCEO VCS VES
IC PD
PD
TJ,Tst9
Value
25 25 4.0 200
350 2.8 1.0 8.
2N5225 Datasheet
