2N5227 - PNP SILICON ANNULAR TRANSISTOR

Datasheet Details

Part number	2N5227
Manufacturer	ETC
File Size	100.13 KB
Description	PNP SILICON ANNULAR TRANSISTOR
Datasheet	2N5227 Datasheet
Additional preview pages of the 2N5227 datasheet.

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2N5228 - PNP SILICON ANNULAR TRANSISTOR

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2NS227 (SILICON) PNP SILICON ANNULAR TRANSISTOR ... designed for general·purpose amplifier applications. • Current Gain Specified at 100 IlAdc and 2.0 mAde • Low Collector· Emitter Saturation Voltage - VCE(sat) = 0.4 Vdc (Max) @ IC = 10 mAde • Collector· Base Capacitance - Ccb = 5.0 pF (Max) @ VCB = 10 Vdc PNP SILICON AMPLIFIER TRANSISTOR "MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Power Dissipation @ T A "" 2SoC Derate above 2SoC Total Power Dissipation @ TC =- 2SoC Derate above 2SoC Operating and Storage Junction Temperature Range Symbol VCEO VCS VES IC Po Po TJ,Tstg Value 30 30 3.0 50 350 2.8 1.0 8.

Published: Jul 14, 2018 |