Datasheet Summary
2NS227 (SILICON)
PNP SILICON ANNULAR TRANSISTOR
... designed for general- purpose amplifier applications.
- Current Gain Specified at 100 IlAdc and 2.0 mAde
- Low Collector- Emitter Saturation Voltage
- VCE(sat) = 0.4 Vdc (Max) @ IC = 10 mAde
- Collector- Base Capacitance
- Ccb = 5.0 pF (Max) @ VCB = 10 Vdc
PNP SILICON AMPLIFIER TRANSISTOR
"MAXIMUM RATINGS
Rating Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous Total Power Dissipation @ T A "" 2SoC
Derate above 2SoC
Total Power Dissipation @ TC =- 2SoC
Derate above 2SoC
Operating and Storage Junction Temperature Range
Symbol VCEO VCS VES
Po
Po
TJ,Tstg
Value
30 30 3.0
50 350 2.8 1.0...
