2N5224
2N5224 is NPN SILICON ANNULAR TRANSISTOR manufactured by Unknown Manufacturer.
52242N (SILICON)
NPN SILICON ANNULAR TRANSISTOR
... designed for general'purpose, low- level switching applications.
- Current Gain Specified at 10 m Adc and 100 m Adc
- plete Switching Specification
- Low Collector- Base Capacitance
- Ccb = 4.0 p F (Max) @ VCB = 5.0 Vdc
NPN SILICON SWITCHING TRANSISTOR
- MAXIMUM RATINGS Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Total Power Dissipation @ T A "" 25°C Derate above 2So C
Total Power Dissipation @ TC "" 25°C Derate above 2So C
Operating and Storage Junction Temperature Range
Symbol VCEO VCB VEB
Po
Po
TJ,T"g
Value
12 25 5.0 200
350 2.8 1.0 8.0 -55 to +150
Unit Vdc Vdc Vdc m Ade m W m W/o C
Watt m WJDC
°c
'THERMAL CHARACTERISTICS Characteristic
Thermal Resistance, Junction to Ambient Thermal Aesistance, Junction to Case
Symbol...
