2N5865 Description
2N5865 (SILICON) PNP SILICON ANNULAR TRANSISTOR· . designed where high·current, high·voltage conditions are require· ments for general·purpose switching and amplifier applications. Collector·Emitter Breakdown Voltage BVCEO = 50 Vdc (Min) @ IC = 10 mAdc DC Current Gain Specified - 1.0 mA to 500 mA Turn·On Time.