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2N6365 - PNP GERMANIUM RF AMPLIFIER TRANSISTORS

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Part number 2N6365
Manufacturer ETC
File Size 98.50 KB
Description PNP GERMANIUM RF AMPLIFIER TRANSISTORS
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2N636S,2N636SA (GERMANIUM) PNP GERMANIUM RF AMPLIFIER TRANSISTORS · .. designed for use in high gain RF amplifier applications. • Coliector·Emitter Breakdown Voltage - BVCES = 25 Vdc (Min) @ IC = 200l1Adc • High Power Gain Gpe = 30 dB (Typ) @ VCE = 6.0 Vdc. f = 10 MHz • Low Collector·Base Capacitance Ccb = 2.0 pF (Max) @VCB= 10 Vdc PNP GERMANIUM RF AMPLIFIER TRANSISTORS 'MAXIMUM RATINGS Rating Collector-Emitter Voltage (1) Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IC Po TJ.Tstg Value 10 30 1.0 100 150 2.
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