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2N6365 Datasheet Preview

2N6365 Datasheet

PNP GERMANIUM RF AMPLIFIER TRANSISTORS

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2N636S,2N636SA (GERMANIUM)
PNP GERMANIUM RF AMPLIFIER TRANSISTORS
· .. designed for use in high gain RF amplifier applications.
• Coliector·Emitter Breakdown Voltage -
BVCES = 25 Vdc (Min) @ IC = 200l1Adc
• High Power Gain -
Gpe = 30 dB (Typ) @ VCE = 6.0 Vdc. f = 10 MHz
• Low Collector·Base Capacitance -
Ccb = 2.0 pF (Max) @VCB= 10 Vdc
PNP GERMANIUM
RF AMPLIFIER
TRANSISTORS
'MAXIMUM RATINGS
Rating
Collector-Emitter Voltage (1)
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCB
VEB
IC
Po
TJ.Tstg
Value
10
30
1.0
100
150
2.0
-65 to +100
Unit
Vdc
Vdc
Vdc
mAde
mW
mW/oC
°c
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
I ISymbol
I IROJA(2)
Max
500
I Unit
I °C/W
(1) Appticablefrom 10p.A to 10 rnA
{21 R8JA is measured with the device soldered into a typical printed CirCUit board.
SEATING
PLANE
STYLE 1
PIN 1. EMIITER
2. BASE
3 COLLECTOR I
MilliMETERS INCHES
DIM MIN MAX MIN MAX
A 5.31 5.84 0.209 0.230
B 4.52 4.95 0.178 0.195
C 4.32 5.33 0.170 0.210
D 0.406 0.533 0.D16 0.021
-E 0.162
0.030
F 0.406 0.483 0.016 0.D1.
G 2.548Se
0.100 BSJ'_
H 0.914 1.17 0.036 0.046
J 0.711 1.22 0.028 0.048
K 12.10
L 6.35
,.'!OJ
0.250
-
M 45 8Se
45 BSe
N 1.27 sse
.05
p - 1.27
0.050
CASE 22
TO-18
2-561




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2N6365 Datasheet Preview

2N6365 Datasheet

PNP GERMANIUM RF AMPLIFIER TRANSISTORS

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2N'6365, 2N6365A (continued)
ELECTRICAL CHARACTERISTICS tTA = 250 C unle.. otherwise noted.)
Cheracteristic
I Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
(lC = 200 I'Ade, VBE = 0)
BVCES
Collector-Ba.. Breakdown Voltage
(lC= 1001'Ade, IE= 0)
BVCBO
Emitter-Base Breakdown Voltage
(IE = 1001'Ade, IC = 0)
BVEBO
Collector Cutoff Current
(VCB = 15 Vde, IE = 0)
ICBO
Emitter Cutoff Current
(VBE = 0.5 Vde, IC = 0)
lEBO
ON CHARACTERISTICS (1)
DC Current Gain
(lc = 1.0 mAde, VCE = 6.0 Vde)
2N6365
2N6365A
hFE
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
2N6365
2N6365A
VBE(sat)
OYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(lC = 1.0 mAde, VCE = 6.0 Vde, f = 100 MHz)
fT
Collector-Base Capacitance
(VCB = 10 Vde, IE = 0, f = 1.0 MHz)
Ceb
Small-Signal Current Gain
(lc = 1.0 mAde, VCE = 6.0 Vde, f = 10 MHz)
hfe
Input Resistance
(lC = 1.0 mAde, VCE = 6.0 Vde, f = 250 MHz)
Re(hie l
FUNCTIONAL TEST
Common-Emitter Amplifier Power Gain
(VCE = 6.0 Vde, IC = 1.0 mAde, f = 10 MHz)
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width ";;300 1", Duty Cycle ";;2.0%.
Min
25
30
1.0
-
-
20
20
-
-
200
-
16
25
Typ
-
-
-
-
-
50
-
0.40
0.38
500
1.0
-
-
Max
Unit
- Vde
- Vde
- Vde
10 I'Ade
100 I'Ade
100
80
0.50
0.42
800
2.0
63
250
-
Vde
MHz
pF
-
Ohms
FIGURE 1 - POWER GAIN TEST CIRCUIT
9.0·35 pF
61 pF
VEE
L 1 = 24 Turns of #28 AWG Wire
Load Tap - 5 Turns from Collector End
Supply Tap - 15 Turns from Collector End
Neutralization - 9 Turns
2-562


Part Number 2N6365
Description PNP GERMANIUM RF AMPLIFIER TRANSISTORS
Maker ETC
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2N6365 Datasheet PDF






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