2N6367
2N6367 is NPN SILICON RF POWER TRANSISTOR manufactured by Unknown Manufacturer.
2N6367 (SILICON)
The RF Line
NPN SILICON RF POWER TRANSISTOR
- . . designed primarily for driver applications in 12.5 volt single~ideband amplifiers from 2.0 to 30 MHz.
- Optimized for Operation from a 12:5 Volt Supply
- Power Output@ 12.5 Vdc, 30 MHz -:-H.O W (PEP)
- Intermodulation Distortion at Ra.ted Powe, Output-
IMD .= -30 d B (Max)
9 W (PEP)
- 30 MHz
RF POWER ,TRANSISTOR
NPN SILICON
"MAXIMUM RATINGS
,.
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
- Continuous' Total Device Dissipation @ T C
- 2So C
Derate above 2So C Storage Temperature Range'
- Indicates JEDEC Registered Da~a.
Symbol VCEO VCBO VEBO
Po
T stg
Value 18 36 4.0 2.0 20
0.114 -65 to +200
Unit Vdc Vdc Vdc Ado Watts W/o C
°c
,
TYPICAL DRIVER. APPLICATION 2-30 MHz WIDE BAND AMPLIFIER
0.160 W(PEPj
80...
