2N6366
2N6366 is NPN SILICON RF POWER TRANSISTOR manufactured by Unknown Manufacturer.
2N6366 (SILICON)
The RF Line
NPN SILICON RF POWER TRANSISTOR
. designed for operation in driver and predriver stages for high power linear amplifiers, 2.0 to 30 MHz.
- Optimized for Operation from a 12.5 Volt Supply
- Power Gain @ 2.5 W (PEP) = 17 d B (Min)
- I ntermodulation Distortion at Rated Power Output
IMD = -35 d B (Max)
2.5 W (PEP)-30 MHz
RFPOWER TRANSISTOR NPN SILICON
MAXIMUM RATINGS
Rating
- COllector-Emitter Voltage
- Collector-Base Voltage
- Emitter-Base Voltage
- Collector Current
- Continuous
- Total Device Dissipation@Tc = 25°C
Derate above 25°C
- Storage Temperature Range
Maximum Stud Torque (11
Symbol VCEO VCBO VEBO
Po
T stg
- Value 18 36 4.0 1.0 10
57.2 -65 to +200
Unit Vdc Vdc Vdc Adc Watts m W/o C
°c in Ab.
-Indicates JEDEC Registered Data. (1) For repeated assembly use 1.8 in-Ib...
