2N6365 Overview
2N636S,2N636SA (GERMANIUM) PNP GERMANIUM RF AMPLIFIER TRANSISTORS · .. designed for use in high gain RF amplifier applications. Coliector·Emitter Breakdown Voltage - BVCES = 25 Vdc (Min) @ IC = 200l1Adc High Power Gain Gpe = 30 dB (Typ) @ VCE = 6.0 Vdc.