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2N636S,2N636SA (GERMANIUM)
PNP GERMANIUM RF AMPLIFIER TRANSISTORS
· .. designed for use in high gain RF amplifier applications. • Coliector·Emitter Breakdown Voltage -
BVCES = 25 Vdc (Min) @ IC = 200l1Adc
• High Power Gain Gpe = 30 dB (Typ) @ VCE = 6.0 Vdc. f = 10 MHz
• Low Collector·Base Capacitance Ccb = 2.0 pF (Max) @VCB= 10 Vdc
PNP GERMANIUM RF AMPLIFIER TRANSISTORS
'MAXIMUM RATINGS
Rating
Collector-Emitter Voltage (1) Collector-Base Voltage Emitter-Base Voltage
Collector Current - Continuous
Total Power Dissipation @ TA = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol VCEO
VCB VEB
IC
Po
TJ.Tstg
Value 10 30 1.0 100 150 2.