2N6365 Datasheet | Unknown Manufacturer

2N636S,2N636SA (GERMANIUM) PNP GERMANIUM RF AMPLIFIER TRANSISTORS - .. designed for use in high gain RF amplifier applications. - Coliector- Emitter Breakdown Voltage - BVCES = 25 Vdc (Min) @ IC = 200l1Adc - High Power Gain Gpe = 30 d B (Typ) @ VCE = 6.0 Vdc. f = 10 MHz - Low Collector- Base Capacitance Ccb = 2.0 p F (Max) @VCB= 10 Vdc PNP GERMANIUM RF AMPLIFIER TRANSISTORS 'MAXIMUM RATINGS Rating Collector-Emitter Voltage (1) Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB Po TJ.Tstg Value 10 30 1.0 100 150 2.0 -65 to +100 Unit Vdc Vdc Vdc m Ade m W m W/o C °c THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient I ISymbol I IROJA(2) Max 500 I...