2N6368
2N6368 is NPN SILICON RF POWER TRANSISTOR manufactured by Unknown Manufacturer.
2N6368 (SILICON)
The RF Line
NPN SILICON RF POWER TRANSISTOR
- .. designed primarily for applications as a high- power linear ampli- fier from 2.0 to 30 MHz.
- Optimized for Operation from a 12.5 Volt Supply
- Power Output @ 12.5 Vdc, 30 MHz = 40 W (PEP)
- Power Gain @ 30 MHz = 10 d B (Min)
- Intermodulation Distortion at Rated Power Output
- IMD = -30 d B (Max)
- Isothermal- Resistor Design Results in Rugged Device
40 W (PEP)
- 30 MHz
RF POWER TRANSISTOR NPN SILICON
'MAXIMUM RATINGS Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
- Continuous Total Device Dlssipation@.Tc- 25°C
Derate above 25°C Storage Temperature Range
- Indicates JEDEC Registered Data
Symbol VCEO VCBO VEBO
Po
Tstg
Value 20 40 40 8.0 140 0.8
-65 '0+200
Unit Vdc Vdc Vdc Adc Watts W/o C °C
.,ti/
/ ' PIN 1 EMITTER
2 BASE
~I-,r FJ ,~-t F ..
B 1.
3 EMITTER E 4...
