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2N6368 (SILICON)
The RF Line
NPN SILICON RF POWER TRANSISTOR
· .. designed primarily for applications as a high·power linear ampli· fier from 2.0 to 30 MHz.
• Optimized for Operation from a 12.5 Volt Supply • Power Output @ 12.5 Vdc, 30 MHz = 40 W (PEP) • Power Gain @ 30 MHz = 10 dB (Min) • Intermodulation Distortion at Rated Power Output -
IMD = -30 dB (Max) • Isothermal· Resistor Design Results in Rugged Device
40 W (PEP) - 30 MHz
RF POWER TRANSISTOR NPN SILICON
'MAXIMUM RATINGS Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dlssipation@.Tc- 25°C
Derate above 25°C Storage Temperature Range
·Indicates JEDEC Registered Data
Symbol VCEO VCBO VEBO
IC
Po
Tstg
Value 20 40 40 8.0 140 0.
2N6368 Datasheet
