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2N6366 Datasheet Preview

2N6366 Datasheet

NPN SILICON RF POWER TRANSISTOR

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2N6366 (SILICON)
The RF Line
NPN SILICON RF POWER TRANSISTOR
. designed for operation in driver and predriver stages for high
power linear amplifiers, 2.0 to 30 MHz.
• Optimized for Operation from a 12.5 Volt Supply
• Power Gain @ 2.5 W (PEP) = 17 dB (Min)
• I ntermodulation Distortion at Rated Power Output
IMD = -35 dB (Max)
2.5 W (PEP)-30 MHz
RFPOWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
* COllector-Emitter Voltage
* Collector-Base Voltage
* Emitter-Base Voltage
* Collector Current - Continuous
*Total Device Dissipation@Tc = 25°C
Derate above 25°C
• Storage Temperature Range
Maximum Stud Torque (11
Symbol
VCEO
VCBO
VEBO
IC
Po
T stg
-
Value
18
36
4.0
1.0
10
57.2
-65 to +200
2.1
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/oC
°c
inAb.
-Indicates JEDEC Registered Data.
(1) For repeated assembly use 1.8 in-Ib maximum.
2-663
PIN 1 EMITTER
2. BASE
3. COLLECTOR
MILLIMETERS
DIM MIN MAX
A 10.49 11.00
8 9.19 9.53
C 5.33 5.72
o 0.406 0.533
E 1.65 1.78
F 0.406 0.483
G 2.5 esc
H 0.5lI8 0.889
J 6.13 1.42
K 12.70
L 6.35
N 1.21 esc
P 1.21
R 8.89 9.14
S 4.45 4.83
T 4.11 4.29
U 1.14 1.52
CASE 24
TO-l02




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2N6366 Datasheet Preview

2N6366 Datasheet

NPN SILICON RF POWER TRANSISTOR

No Preview Available !

2N6366 (continued)
'ELECTRICAL CHARACTERISTICS (TC = 2SoC unless otherwise noted)
I Characteristic
OFF CHARACTERISTics
Collector-Emitter Breakdown Voltage
(lC = 50 mAde, IB = 0)
Collector-Emitter Breakdown Voltage
(lC = 50 mAde, VBE = 0)
Emitter-Base Breakdown Voltage
(IE = 0.25 mAde, IC = 0)
Collector Cutoff Current
(VCE = 15 Vde, VBE = 0, T A = 125°C)
ON CHARACTERISTICS
DC Current Gain
(lC = 250 mAde, VCE = 5.0 Vde)
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 150 mAde, VCE = 12.5 Vde, I = 50 MHz)
Output Capacitance
(VCB = 12.5 Vde, IE = 0, I = 1.0 MHz)
FUNCTIONAL TESTS (Figure 1)
Common~Emitter Amplifier Power Gain
(VCC = 12.5 Vde, Pout =2.5 W (PEP), 11 = 30 MHz, 12= 30,001 MHz)
Collector Efficiency
(VCC = 12.5 Vde, Pout = 2.5 W (PEP), 11 = 30 MHz,12 = 30,001 MHz)
Intermodulation Distortion
(VCC = 12.5 Vde, Pout = 2.5 W (PEP), 11 = 30 MHz, 12= 30,001 MHz)
*lndicatesJEDEC Registered Data
Symbol
BVCEO
BVCES
BVEBO
ICES
Min
18
36
4_0
-
MIIX
Unit
- Vdc
- Vde
- Vde
5.0 mAde
for 50
Cob -
- MHz
20 pF
GpE
17
-
'I 38.5 -
IMD -
-35
dB
%
dB
FIGURE 1 - 30 MHz TEST CIRCUIT
50n
2W
Bias = 0 to 5 V ........WIr".......,------<t-......-..,
lN4001
L3
.--_ _~-....-----I...,.-rr'---.....- - - - - - - VCC = 12.5 V
RF
Input
son
Cl
Ll
_°--i·l~...._ _ _ _...._ _rvy--,n..._...... ~~tPut
IC4 5~n
Adjust Bias For ICO = 15 rnA
Cl,C2
C3,C4
Ll
L2
L3
80·480 pF. AACO 466 or equivalent
25·280 pF. AReO 464 or equivalent
0.1 ,..H Molded Choke
0.15 ",H Molded Choke
Ferrite Choke. FERROXCUBE
VK200 01"()3B or equivalent
2-564


Part Number 2N6366
Description NPN SILICON RF POWER TRANSISTOR
Maker ETC
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2N6366 Datasheet PDF






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