* Single +3.3V ±0.3V power supply
* Industry-standard x16 pinout, timing, functions, and package
* 12 row, 10 column addresses (4) 13 row, 9 column addresses .

The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memor.

4X16E83V

4X16E43V