Datasheet4U Logo Datasheet4U.com
4 views

4X16E83VTW-6 Datasheet - ETC

4X16E83VTW-6 - 4 MEG x 16 EDO DRAM

The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in 4,096 rows by 1,024 co

4X16E83VTW-6 Features

* Single +3.3V ±0.3V power supply

* Industry-standard x16 pinout, timing, functions, and package

* 12 row, 10 column addresses (4) 13 row, 9 column addresses (8)

* High-performance CMOS silicon-gate process

* All inputs, outputs and clocks are LVTTL-compatible

4X16E83VTW-6_ETC.pdf

Preview of 4X16E83VTW-6 PDF
4X16E83VTW-6 Datasheet Preview Page 2 4X16E83VTW-6 Datasheet Preview Page 3

Datasheet Details

Part number:

4X16E83VTW-6

Manufacturer:

ETC

File Size:

598.34 KB

Description:

4 meg x 16 edo dram.

📁 Related Datasheet

📌 All Tags