• Part: EN29F002N
  • Manufacturer: Unknown Manufacturer
  • Size: 267.13 KB
Download EN29F002N Datasheet PDF
EN29F002N datasheet preview
EN29F002N page 2
Page 2
EN29F002N page 3
Page 3

EN29F002N Key Features

  • 5.0V ± 10% for both read/write operation
  • Read Access Time
  • 45ns, 55ns, 70ns, and 90ns
  • Fast Read Access Time
  • 70ns with Cload = 100pF
  • 45ns, 55ns with Cload = 30pF
  • Sector Architecture: One 16K byte Boot Sector, Two 8K byte Parameter Sectors, one 32K byte and three 64K byte main Secto
  • Boot Block Top/Bottom Programming Architecture
  • High performance program/erase speed Byte program time: 10µs typical Sector erase time: 500ms typical Chip erase time: 3
  • JEDEC standard DATA polling and toggle bits feature

Related Unknown Manufacturer Datasheets

Part Number Description
EN29F002 2 Megabit (256K x 8-bit) Flash Memory
EN29F002A 2 Megabit (256K x 8-bit) Flash Memory
EN29F040 4 Megabit (512K x 8-bit) Flash Memory

EN29F002N Description

The EN29F002 / EN29F002N is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byte Parameter sectors, and four main sectors (one 32K Byte and three 64K Byte). Any byte can be programmed typically at 10µs.