* International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier l l l l l l Test Conditions Characteristic Values (TJ = 25°C, unless otherwis
IXFM12N90 Datasheet (86.00 KB)
IXFM12N90
ETC
86.00 KB
Power mosfet.
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 IXFH13 N90 900 V 900 V.
📁 Related Datasheet
IXFM12N90 Power MOSFETs (IXYS)
IXFM12N100 Power MOSFET (IXYS Corporation)
IXFM10N100 Power MOSFET (IXYS Corporation)
IXFM10N90 Power MOSFET (ETC)
IXFM10N90 Power MOSFETs (IXYS)
IXFM11N80 Power MOSFET (IXYS Corporation)
IXFM13N50 Power MOSFET (IXYS Corporation)
IXFM13N80 Power MOSFET (IXYS Corporation)
IXFM13N90 Power MOSFET (ETC)
IXFM15N60 HiPerFET Power MOSFETs (IXYS Corporation)
