* International standard package
* Encapsulating epoxy meets UL 94 V-0, flammability classification
* miniBLOC with Aluminium nitride isolation
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (U
IXFN180N10 Datasheet (84.33 KB)
IXFN180N10
ETC
84.33 KB
Power mosfet.
HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet IXFN 180N10 VDSS ID25 RDS(on) = 100 V = 180 A = 8 mΩ trr ≤ 250 ns Symbol Test Co.
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