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F50L1G41A Datasheet – 3.3V 1 Gbit SPI-NAND Flash Memory

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

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General Description

The serial electrical interface follows the industry-standard serial peripheral interface (SPI), providing a cost-effective non-volatile memory storage solution in systems where pin count must be kept to a minimum.

The device is a 1Gb SLC SPI-NAND Flash memory device based on the standard parallel NAND Flash, but new command protocols and registers are defined for SPI operation.

It is also an alternative to SPI-NOR, offering superior write performance and cost per bit over SPI-NOR.

Overview

ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Time Note: 1.

x2 PROGRAM operation is not defined.

F50L1G41A (2Y) 3.3V 1 Gbit SPI-NAND Flash Memory Values 3.3V x1, x21, x4 104MHz 1-bit 9.

Key Features

  • z Voltage Supply: 3.3V (2.7V~3.6V) z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte z Page Read Operation - Page Size: (2K + 64) Byte - Read from Cell to Register with Internal ECC: 100us z Memory Cell: 1bit/Memory Cell z Support SPI-Mode 0 and SPI-Mode 31 z Fast Write Cycle Time - Program time:400us - Block Erase time: 4ms z Hardware Data Protection - Program/Er.

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More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

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