F59L512M81A - 512Mbit (64M x 8) 3.3V NAND Flash Memory

Elite Semiconductor

Datasheet Details

Part number	F59L512M81A
Manufacturer	Elite Semiconductor
File Size	1.12 MB
Description	512Mbit (64M x 8) 3.3V NAND Flash Memory
Datasheet	F59L512M81A-EliteSemiconductor.pdf

The device is a 64Mx8bit with spare 2Mx8bit capacity.

Voltage Supply: 2.7V ~ 3.6V.
Organization - Memory Cell Array: (64M + 2M) x 8bit - Data Register: (2K + 64) x 8bit.
Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte.
Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max. ) - Serial Access: 25ns (Min. ).
Memory Cell: 1bit/Memory Cell.
Fast Write Cycle Time - Program time: 250us (Typ. ) - Block Erase time: 2ms (Typ. ).
Command/Address/Data Multiplexed I/O.

📁 F59L512M81A Similar Datasheet

F59L1G81LA - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
F59L1G81LB - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
F59L1G81LB-25BCG2M - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
F59L1G81LB-25BG2M - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
F59L1G81LB-25TG2M - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
F59L1G81MA-25BCG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
F59L1G81MA-25BCIG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
F59L1G81MA-25BG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)

Other Datasheets by Elite Semiconductor

F59L1G81A - 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L2G81A - 2 Gbit (256M x 8) 3.3V NAND Flash Memory
F59L4G81A - 4 Gbit (512M x 8) 3.3V NAND Flash Memory
F59D1G161A - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81A - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D2G161A - 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory

Published: Feb 16, 2016 |