Description
The EM42BM3284LBA is Double-Date-Rate Synchronous DRAM fabricated with ultra high performance CMOS process containing 1,073,741,824 bits which organized as 8Meg words x 4 banks by 32 bits.
Features
- Internal Double-Date-Rate architecture with 2 Accesses per clock cycle.
- 1.8V ±0.1V VDD/VDDQ.
- 1.8V LV-COMS compatible I/O.
- Burst Length (B/L) of 2, 4, 8, 16.
- 3 Clock read latency.
- Bi-directional,intermittent data strobe(DQS).
- All inputs except data and DM are sampled at the positive edge of the system clock.
- Data Mask (DM) for write data.
- Sequential & Interleaved Burst type available.
- Auto Precharge optio.
EM42BM3284LBA-Eorex.pdf
