EM68916DVAA - 8M x 16 Mobile DDR Synchronous DRAM

Description

Table 2.

Differential Clock: CK and CK are differential clock inputs.

All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK .

Fast clock rate: 166/133 MHz Differential Clock CK & CK Bi-directional DQS Four internal banks, 2M x 16-bit for each bank Edge-aligned with read data, centered in write data Programmable Mode and Extended Mode Registers.
- CAS Latency: 2, or 3 - Burst length: 2, 4, or 8 - Burst Type: Sequential & Interleaved - PASR (Partial Array Self Refresh) - Auto TCSR (Temperature Compensated Self Refresh) - DS (Drive Strength).
Individual byte writes mask control.
DM Write Latency.

Etron Technology

Part number	EM68916DVAA
Manufacturer	Etron Technology
File Size	424.46 KB
Description	8M x 16 Mobile DDR Synchronous DRAM
Datasheet	EM68916DVAA Datasheet

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Other Datasheets by Etron Technology

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www.DataSheet.co.kr EtronTech Etron Confidential EM68916DVAA Advanced (Rev. 1.0 Apr. /2009) Table 1.

Published: Dec 9, 2011 |