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EM6A8160TSA - 4M x 16 DDR Synchronous DRAM

Features

  • Fast clock rate: 200MHz.
  • Differential Clock CK & CK.
  • Bi-directional DQS.
  • DLL enable/disable by EMRS.
  • Fully synchronous operation.
  • Internal pipeline architecture.
  • Four internal banks, 1M x 16-bit for each bank.
  • Programmable Mode and Extended Mode Registers - CAS Latency: 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved.
  • Individual byte writes mask control.
  • DM Write Latency = 0.
  • Auto.

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Datasheet Details

Part number EM6A8160TSA
Manufacturer Etron Technology
File Size 402.78 KB
Description 4M x 16 DDR Synchronous DRAM
Datasheet download datasheet EM6A8160TSA Datasheet

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Full PDF Text Transcription

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EtronTech EM6A8160TSA Etron Confidential 4M x 16 DDR Synchronous DRAM (SDRAM) Advanced (Rev. 1.2 Apr. /2009) Features • Fast clock rate: 200MHz • Differential Clock CK & CK • Bi-directional DQS • DLL enable/disable by EMRS • Fully synchronous operation • Internal pipeline architecture • Four internal banks, 1M x 16-bit for each bank • Programmable Mode and Extended Mode Registers - CAS Latency: 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved • Individual byte writes mask control • DM Write Latency = 0 • Auto Refresh and Self Refresh • 4096 refresh cycles / 64ms • Precharge & active power down • Power supplies: VDD & VDDQ = 2.5V ± 5% • Interface: SSTL_2 I/O Interface • Package: 66 Pin TSOP II, 0.
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