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EM6A9160 - 8M x 16 DDR Synchronous DRAM

Description

Table 1.

Pin Details of EM6A9160 Description Differential Clock: CK, /CK are driven by the system clock.

All SDRAM input signals are sampled on the positive edge of CK.

Features

  • Fast clock rate: 300/275/250/200MHz Differential Clock CK & /CK Bi-directional DQS DLL enable/disable by EMRS Fully synchronous operation Internal pipeline architecture Four internal banks, 1M x 16-bit for each bank Programmable Mode and Extended Mode registers - /CAS Latency: 3, 4 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved Individual byte write mask control DM Write Latency = 0 Auto Refresh and S.

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Datasheet Details

Part number EM6A9160
Manufacturer Etron Technology
File Size 277.84 KB
Description 8M x 16 DDR Synchronous DRAM
Datasheet download datasheet EM6A9160 Datasheet
Additional preview pages of the EM6A9160 datasheet.

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Full PDF Text Transcription

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EtronTech Features • • • • • • • • Fast clock rate: 300/275/250/200MHz Differential Clock CK & /CK Bi-directional DQS DLL enable/disable by EMRS Fully synchronous operation Internal pipeline architecture Four internal banks, 1M x 16-bit for each bank Programmable Mode and Extended Mode registers - /CAS Latency: 3, 4 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved Individual byte write mask control DM Write Latency = 0 Auto Refresh and Self Refresh 4096 refresh cycles / 32ms Precharge & active power down Power supplies: VDD & VDDQ = 2.5V ± 5% Interface: SSTL_2 I/O Interface Package: 66 Pin TSOP II, 0.65mm pin pitch Lead-free Package is available. EM6A9160 (Rev. 1.
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