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EM6A9160TSD - 8M x 16 DDR Synchronous DRAM

Description

Table 2.

Differential Clock: CK, CK are driven by the system clock.

All SDRAM input signals are sampled on the positive edge of CK.

Features

  • Fast clock rate: 250/200MHz.
  • Differential Clock CK & CK input.
  • Bi-directional DQS.
  • DLL enable/disable by EMRS.
  • Fully synchronous operation.
  • Internal pipeline architecture.
  • Four internal banks, 2M x 16-bit for each bank.
  • Programmable Mode and Extended Mode registers - CAS Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved.
  • Individual byte write mask control.
  • DM Write Latency = 0.
  • Auto Refresh and Self Refresh.

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Datasheet preview – EM6A9160TSD

Datasheet Details

Part number EM6A9160TSD
Manufacturer Etron Technology
File Size 705.97 KB
Description 8M x 16 DDR Synchronous DRAM
Datasheet download datasheet EM6A9160TSD Datasheet
Additional preview pages of the EM6A9160TSD datasheet.

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Full PDF Text Transcription

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EtronTech EM6A9160TSD 8M x 16 DDR Synchronous DRAM (SDRAM) Advance (Rev. 1.0, Jan. /2017) Features  Fast clock rate: 250/200MHz  Differential Clock CK & CK input  Bi-directional DQS  DLL enable/disable by EMRS  Fully synchronous operation  Internal pipeline architecture  Four internal banks, 2M x 16-bit for each bank  Programmable Mode and Extended Mode registers - CAS Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved  Individual byte write mask control  DM Write Latency = 0  Auto Refresh and Self Refresh  4096 refresh cycles / 64ms  Precharge & active power down  Power supplies: VDD & VDDQ = 2.5V 0.2V  Operating Temperature: TA = -40~85°C (Industrial)  Interface: SSTL_2 I/O Interface  Package: 66 Pin TSOP II, 0.
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