EM6A9160TSD - 8M x 16 DDR Synchronous DRAM

Product Overview

Etron Technology

Part number	EM6A9160TSD
Manufacturer	Etron Technology
File Size	705.97 KB
Description	8M x 16 DDR Synchronous DRAM
Datasheet	EM6A9160TSD Datasheet
Additional preview pages of the EM6A9160TSD datasheet.

Table 2.

Fast clock rate: 250/200MHz.
Differential Clock CK & CK input.
Bi-directional DQS.
DLL enable/disable by EMRS.
Fully synchronous operation.
Internal pipeline architecture.
Four internal banks, 2M x 16-bit for each bank.
Programmable Mode and Extended Mode registers - CAS Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved.
Individual byte write mask control.
DM Write Latency = 0.
Auto Refresh and Self Refresh.

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Published: Nov 19, 2024 |