FLK017XP chips equivalent, gaas fet & hemt chips.
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* High Output Power: P1dB = 20.5dBm(Typ.) High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability
Source Gate
Drain
DESCRIPTIO.
in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assuranc.
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