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FLK027XV - GaAs FET & HEMT Chips

This page provides the datasheet information for the FLK027XV, a member of the FLK027XP GaAs FET & HEMT Chips family.

Datasheet Summary

Description

The FLK027XP, and FLK027XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency.

Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

Features

  • High Output Power: P1dB = 24.0dBm(Typ. ) High Gain: G1dB = 7.0dB(Typ. ) High PAE: ηadd = 32%(Typ. ) Proven Reliability Source Gate Drain.

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Datasheet preview – FLK027XV

Datasheet Details

Part number FLK027XV
Manufacturer Eudyna Devices
File Size 129.11 KB
Description GaAs FET & HEMT Chips
Datasheet download datasheet FLK027XV Datasheet
Additional preview pages of the FLK027XV datasheet.

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Full PDF Text Transcription

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FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Source Gate Drain DESCRIPTION The FLK027XP, and FLK027XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
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