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FLK027XV - GaAs FET & HEMT Chips

Download the FLK027XV datasheet PDF. This datasheet also covers the FLK027XP variant, as both devices belong to the same gaas fet & hemt chips family and are provided as variant models within a single manufacturer datasheet.

General Description

The FLK027XP, and FLK027XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency.

Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

Key Features

  • High Output Power: P1dB = 24.0dBm(Typ. ) High Gain: G1dB = 7.0dB(Typ. ) High PAE: ηadd = 32%(Typ. ) Proven Reliability Source Gate Drain.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FLK027XP_EudynaDevices.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number FLK027XV
Manufacturer Eudyna Devices
File Size 129.11 KB
Description GaAs FET & HEMT Chips
Datasheet download datasheet FLK027XV Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Eudyna Devices

Part Number Description
FLK027XP GaAs FET & HEMT Chips
FLK027WG Ku Band Power GaAs FET
FLK017WF Ku Band Power GaAs FET
FLK017XP GaAs FET & HEMT Chips
FLK057WG Ku Band Power GaAs FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Source Gate Drain DESCRIPTION The FLK027XP, and FLK027XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS Ptot Tstg Tch Condition Source Rating 15 -5 Unit V V W °C °C Tc = 25°C 1.