Eudyna Devices FLK017XP
The FLK017XP chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. The drain-source operating voltage (VDS) should not exceed 10 volts. The forward and reverse gate currents should not exceed 1.34 and -0.05 mA respectively with gate resistance of 3000Ω.| Part No. | FLK017XP |
|---|---|
| Datasheet | FLK017XP Download |
| Manufacturer |  Eudyna Devices |
| Description | GaAs FET & HEMT Chips |
| Buy | Stock & Price |
FEATURES
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● High Output Power: P1dB = 20.5dBm(Typ.) High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Source Gate Drain
DESCRIPTION
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS Ptot Tstg Tch Condition Source Rating 15 -5 Unit V V W °C °C Tc = 25°C 1.15 -65 to +175 175 Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. 2. 3. The operating channel temperature (Tch) should not exceed 145°C.ELECTRICAL CHARACTERISTICS
(Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Power-added Efficiency Noise Figure Associated Gain Maximum Availble Gain Thermal Resistance Symbo...
