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FLK017XP - GaAs FET & HEMT Chips

Datasheet Summary

Description

The FLK017XP chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency.

Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

Features

  • High Output Power: P1dB = 20.5dBm(Typ. ) High Gain: G1dB = 8.0dB(Typ. ) High PAE: ηadd = 26%(Typ. ) Proven Reliability Source Gate Drain.

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Datasheet Details

Part number FLK017XP
Manufacturer Eudyna Devices
File Size 90.29 KB
Description GaAs FET & HEMT Chips
Datasheet download datasheet FLK017XP Datasheet
Additional preview pages of the FLK017XP datasheet.

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FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm(Typ.) High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Source Gate Drain DESCRIPTION The FLK017XP chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
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