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FLL810IQ-4C Datasheet L-Band High Power GaAs FET

Manufacturer: Eudyna Devices

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Datasheet Details

Part number FLL810IQ-4C
Manufacturer Eudyna Devices
File Size 192.49 KB
Description L-Band High Power GaAs FET
Datasheet download datasheet FLL810IQ-4C Datasheet

General Description

The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design which offers excellent linearity, ease of matching, and greater consistency in covering the frequency band of 3.5 to 3.7 GHz.

This new product is uniquely suited for use in WLL applications as it offers high gain, long term reliability and ease of use.

ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Item Symbol Condition Rating Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VDS VGS PT Tstg Tch Tc = 25°C Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1.

Key Features

  • Push-Pull Configuration.
  • High Power Output: 80W.
  • High PAE: 45%.
  • Excellent Linearity.
  • Suitable for class AB operation.
  • Hermetically Sealed Package FLL810IQ-4C L-Band High Power GaAs FET.

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