datasheet4u.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf





Eudyna Devices
Eudyna Devices

FLX107MH-12 Datasheet Preview

FLX107MH-12 Datasheet

X / Ku Band Power GaAs FET

No Preview Available !

FLX107MH-12 pdf
FEATURES
• High Output Power: P1dB = 30.0dBm(Typ.)
• High Gain: G1dB = 7.5dB(Typ.)
• High PAE: ηadd = 33%(Typ.)
• Proven Reliability
• Hermetic Metal/Ceramic Package
FLX107MH-12
X, Ku Band Power GaAs FET
DESCRIPTION
The FLX107MH-12 is a power GaAs FET that is designed for general
purpose applications in the X-Band frequency range as it provides
superior power, gain, and efficiency.
Eudyna stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 8.8 and -0.5 mA respectively with
gate resistance of 500.
3. The operating channel temperature (Tch) should not exceed 145°C.
Rating
15
-5
7.5
-65 to +175
175
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 250mA
-
-
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Power-added Efficiency
Vp
VGSO
P1dB
G1dB
ηadd
VDS = 5V, IDS = 20mA
IGS = -20µA
VDS = 10V,
IDS = 0.6 IDSS (Typ.),
f = 12.5 GHz
-1.0
-5
29.0
6.5
-
Limit
Typ. Max.
400 600
200 -
-2.0 -3.5
--
30.0 -
7.5 -
33 -
Unit
mA
mS
V
V
dBm
dB
%
Thermal Resistance
CASE STYLE: MH
Rth Channel to Case
- 15 20
°C/W
G.C.P.: Gain Compression Point
Edition 1.1
August 1999
1



Eudyna Devices
Eudyna Devices

FLX107MH-12 Datasheet Preview

FLX107MH-12 Datasheet

X / Ku Band Power GaAs FET

No Preview Available !

FLX107MH-12 pdf
FLX107MH-12
X, Ku Band Power GaAs FET
POWER DERATING CURVE
10
8
6
4
2
0 50 100 150 200
Case Temperature (°C)
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
500
400 VGS =0V
300 -0.5V
-1.0V
200
-1.5V
100
-2.0V
0 2 4 6 8 10
Drain-Source Voltage (V)
OUTPUT POWER vs. INPUT POWER
f = 12.5GHz
IDS 0.6 IDSS
VDS=10V
30 VDS=8.5V
Pout
28
26
24
ηadd
22
40
20
14 16 18 20 22 24
Input Power (dBm)
P1dB & ηadd vs. VDS
f = 12.5 GHz
IDS 0.6 IDSS
31
30 P1dB
29
28
27
26
ηadd
40
30
20
10
8 9 10
Drain-Source Voltage (V)
2


Part Number FLX107MH-12
Description X / Ku Band Power GaAs FET
Maker Eudyna Devices
Total Page 4 Pages
PDF Download
FLX107MH-12 pdf
FLX107MH-12 Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 FLX107MH-12 X / Ku Band Power GaAs FET Eudyna Devices
Eudyna Devices
FLX107MH-12 pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy