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EL816D-G Datasheet Preview

EL816D-G Datasheet

4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

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4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL816(D)-G Series
Schematic
Features:
Compliance Halogens Free
(Br < 900 ppm, Cl < 900 ppm, Br+Cl < 1500 ppm)
Current transfer ratio
(CTR: 50~600% at IF = 5mA, VCE = 5V)
(CTR: 63~125% at IF = 10mA, VCE = 5V)
(CTR: 10~265% at IF = 0.5mA, VCE = 5V)
High isolation voltage between input
and output (Viso = 5000 V rms )
Compact small outline package
Compliance with EU REACH
The product itself will remain within RoHS compliant version
UL and cUL approved (No. E214129)
VDE approved (No. 132249)
SEMKO approved (No. 1406091)
NEMKO approved (No. P11214765)
DEMKO approved (No. D-03301)
FIMKO approved (No. FI 27474)
CQC approved (No. CQC08001022757)
Pin Configuration
1. Anode
2. Cathode
3. Emitter
4. Collector
Description
The EL816(D)-G series of devices each consist of an infrared
emitting diodes, optically coupled to a phototransistor detector
encapsulated with green compound. It is packaged in a 4-pin DIP
package and available in wide-lead spacing and SMD option.
Applications
Programmable controllers
System appliances, measuring instruments
Telecommunication equipments
Home appliances, such as fan heaters, etc.
Signal transmission between circuits of different potentials and impedances
1 Copyright © 2010,Everlight All Rights Reserved. Release Date: 2016/9/21. Issue No: DPC-0000008 Rev. 10
www.everlight.com




Everlight

EL816D-G Datasheet Preview

EL816D-G Datasheet

4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

No Preview Available !

DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL816(D)-G Series
Absolute Maximum Ratings (Ta=25°C) *1
Parameter
Symbol
Rating
Unit
Input
Forward current
Peak forward current (1us, pulse)
Reverse voltage
Power dissipation
Derating factor (above Ta = 100°C)
IF
IFP
VR
PD
60 mA
1A
6V
100 mW
2.9 mW/°C
Power dissipation
Derating factor (above Ta = 100°C)
Output
Collector current
Collector-Emitter voltage
Emitter-Collector voltage
Total Power Dissipation
Isolation Voltage*2
Operating Temperature
Storage Temperature
Soldering Temperature*3
Maximum Junction Temperature*4
PC
IC
VCEO
VECO
PTOT
VISO
TOPR
TSTG
TSOL
TJ(max)
150
5.8
50
80
7
200
5000
-55 ~ +110
-55 ~ +125
260
125
mW
mW/°C
mA
V
V
mW
Vrms
°C
°C
°C
°C
Notes
*1 Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the
device is not implied at these or any other conditions in excess of those given in the operational sections of this document.
Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.
*2 AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 are shorted together, and pins 3, 4 are shorted together.
*3 For 10 seconds
*4 This value is for information only and is for the bare chip condition, not for the module conditions.
2 Copyright © 2010,Everlight All Rights Reserved. Release Date: 2016/9/21. Issue No: DPC-0000008 Rev. 10
www.everlight.com


Part Number EL816D-G
Description 4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
Maker Everlight
Total Page 13 Pages
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