EIB1718-1P - Internally Matched Power FET

Features

HIGH PAE( 25%.

Excelics Semiconductor

Datasheet Details

Part number	EIB1718-1P
Manufacturer	Excelics Semiconductor
File Size	49.08 KB
Description	Internally Matched Power FET
Datasheet	EIB1718-1P Datasheet
Additional preview pages of the EIB1718-1P datasheet.

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Full PDF Text Transcription

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Excelics • • • • • • 17.7-18.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 25% TYPICAL) EIB FEATURES HIGH IP3(43dBm TYPICAL) +30.0/+29.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 6.5/5.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1718-1P Not recommended for new designs. Contact factory. Effective 03/2003 17.7-18.7GHz, 1W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1718-1P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=17.7-18.7GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Gain at 1dB Compression f=17.7-18.7GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Power Added Efficiency at 1dB compression f=17.7-18.7GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.

Published: Nov 20, 2009 |