• Part: EIB1011-2P
  • Description: Internally Matched Power FET
  • Manufacturer: Excelics Semiconductor
  • Size: 57.14 KB
Download EIB1011-2P Datasheet PDF
Excelics Semiconductor
EIB1011-2P
EIB1011-2P is Internally Matched Power FET manufactured by Excelics Semiconductor.
Excelics - - - - - - 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA Features HIGH PAE( 30% TYPICAL) EIB Features HIGH IP3(46dBm TYPICAL) +33.5/+33.0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 9.5/8.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1011-2P Not remended for new designs. Contact factory. Effective 03/2003 10.7-11.7GHz, 2W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1011-2P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB pression f=10.7-11.7GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Gain at 1dB pression f=10.7-11.7GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Power Added...