EIB1011-2P - Internally Matched Power FET

Features

HIGH PAE( 30%.

Excelics Semiconductor

Datasheet Details

Part number	EIB1011-2P
Manufacturer	Excelics Semiconductor
File Size	57.14 KB
Description	Internally Matched Power FET
Datasheet	EIB1011-2P Datasheet
Additional preview pages of the EIB1011-2P datasheet.

📁 Similar Datasheet

EIB-TP-UART-IC - TP-UART-IC (Siemens Semiconductor)

Other Datasheets by Excelics Semiconductor

EIB1011-4P - Internally Matched Power FET
EIB1011-4P - 10.7-11.7GHz 4W Internally Matched Power FET
EIB1213-2P - Internally Matched Power FET
EIB1213-4P - Internally Matched Power FET
EIB1314-2P - Internally Matched Power FET
EIB1314-2P - 13.75-14.5 GHz 2-W Internally Matched Power FET
EIB1314-4P - Internally Matched Power FET
EIB1314-4P - 13.75-14.5 GHz 4W Internally Matched Power FET

Full PDF Text Transcription

Click to expand full text

Excelics • • • • • • 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 30% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33.5/+33.0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 9.5/8.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1011-2P Not recommended for new designs. Contact factory. Effective 03/2003 10.7-11.7GHz, 2W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1011-2P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=10.7-11.7GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Gain at 1dB Compression f=10.7-11.7GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Power Added Efficiency at 1dB compression f=10.7-11.7GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.

Published: Nov 20, 2009 |