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EIB1213-2P - Internally Matched Power FET

Key Features

  • 12.75-13.25 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.0 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 25% Power Added Efficiency -46 dBc IM3 at PO = 22.0 dBm SCL Non-Hermetic Metal Flange Package EIB1213-2P.

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Datasheet Details

Part number EIB1213-2P
Manufacturer Excelics Semiconductor
File Size 114.72 KB
Description Internally Matched Power FET
Datasheet download datasheet EIB1213-2P Datasheet

Full PDF Text Transcription for EIB1213-2P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for EIB1213-2P. For precise diagrams, and layout, please refer to the original PDF.

EIB1213-2P UPDATED 06/14/06 12.75-13.25GHz 2W Internally Matched Power FET FEATURES • • • • • • • 12.75-13.25 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33....

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.75-13.25 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.0 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 25% Power Added Efficiency -46 dBc IM3 at PO = 22.0 dBm SCL Non-Hermetic Metal Flange Package EIB1213-2P ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP www.DataSheet4U.com Caution! ESD sensitive device. MIN 32.0 7.50 PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 12.75-13.25GHz VDS = 8 V, IDSQ ≈ 800mA Gain at 1dB Compression f = 12.75-13.25GHz VDS = 8 V, IDSQ ≈ 800mA Gain Flatness f = 12.75-13.25GHz VDS = 8 V, IDSQ ≈ 800mA Power A