EIB1213-2P - Internally Matched Power FET

Features

12.75-13.25 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.0 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 25% Power Added Efficiency -46 dBc IM3 at PO = 22.0 dBm SCL Non-Hermetic Metal Flange Package EIB1213-2P.

Excelics Semiconductor

Datasheet Details

Part number	EIB1213-2P
Manufacturer	Excelics Semiconductor
File Size	114.72 KB
Description	Internally Matched Power FET
Datasheet	EIB1213-2P Datasheet
Additional preview pages of the EIB1213-2P datasheet.

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Full PDF Text Transcription

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EIB1213-2P UPDATED 06/14/06 12.75-13.25GHz 2W Internally Matched Power FET FEATURES • • • • • • • 12.75-13.25 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.0 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 25% Power Added Efficiency -46 dBc IM3 at PO = 22.0 dBm SCL Non-Hermetic Metal Flange Package EIB1213-2P ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP www.DataSheet4U.com Caution! ESD sensitive device. MIN 32.0 7.50 PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 12.75-13.25GHz VDS = 8 V, IDSQ ≈ 800mA Gain at 1dB Compression f = 12.75-13.25GHz VDS = 8 V, IDSQ ≈ 800mA Gain Flatness f = 12.75-13.25GHz VDS = 8 V, IDSQ ≈ 800mA Power Added Efficiency at 1dB Compression f = 12.75-13.

Published: Nov 20, 2009 |