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EIB1011-4P - 10.7-11.7GHz 4W Internally Matched Power FET

Key Features

  • HIGH PAE( 30%.

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Datasheet Details

Part number EIB1011-4P
Manufacturer Excelics Semiconductor
File Size 49.26 KB
Description 10.7-11.7GHz 4W Internally Matched Power FET
Datasheet download datasheet EIB1011-4P Datasheet

Full PDF Text Transcription for EIB1011-4P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for EIB1011-4P. For precise diagrams, and layout, please refer to the original PDF.

Excelics • • • • • • 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 30% TYPICAL) EIB FEATURES HIGH IP3(49dBm TYPICAL) +36.5/+3...

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S HIGH PAE( 30% TYPICAL) EIB FEATURES HIGH IP3(49dBm TYPICAL) +36.5/+35.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 9/8dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1011-4P Not recommended for new designs. Contact factory. Effective 03/2003 10.7-11.7GHz, 4W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1011-4P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=10.7-11.7GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Gain at 1dB Compression f=10.7-11.7GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Power Added Efficiency at 1dB compression f=10.7-11.7GHz

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