EIB1213-4P
EIB1213-4P is Internally Matched Power FET manufactured by Excelics Semiconductor.
UPDATED 06/14/06
12.75-13.25GHz 4W Internally Matched Power FET
Features
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- 12.75-13.25 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB pression 8.5 dB Power Gain at 1dB pression 25% Power Added Efficiency -46 dBc IM3 at PO = 25.0 dBm SCL Non-Hermetic Metal Flange Package
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP
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Caution! ESD sensitive device. MIN
35.0 7.50
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB pression f = 12.75-13.25GHz VDS = 8 V, IDSQ ≈ 1600mA Gain at 1dB pression f = 12.75-13.25GHz VDS = 8 V, IDSQ ≈ 1600mA Gain Flatness f =...
