EIB1314-2P - Internally Matched Power FET

Features

HIGH PAE( 30%.

Excelics Semiconductor

Datasheet Details

Part number	EIB1314-2P
Manufacturer	Excelics Semiconductor
File Size	49.26 KB
Description	Internally Matched Power FET
Datasheet	EIB1314-2P Datasheet
Additional preview pages of the EIB1314-2P datasheet.

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Full PDF Text Transcription

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Excelics • • • • • • 13.75-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 30% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33.5/+33.0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 9.0/8.0dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1314-2P Not recommended for new designs. Contact factory. Effective 03/2003 13.75-14.5GHz, 2W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1314-2P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=13.75-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Gain at 1dB Compression f=13.75-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Power Added Efficiency at 1dB compression f=13.75-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.

Published: Nov 20, 2009 |