EIB1718A-2P - Internally Matched Power FET

Features

HIGH PAE( 25%.

Excelics Semiconductor

Datasheet Details

Part number	EIB1718A-2P
Manufacturer	Excelics Semiconductor
File Size	49.17 KB
Description	Internally Matched Power FET
Datasheet	EIB1718A-2P Datasheet
Additional preview pages of the EIB1718A-2P datasheet.

📁 Similar Datasheet

EIB-TP-UART-IC - TP-UART-IC (Siemens Semiconductor)

Other Datasheets by Excelics Semiconductor

EIB1718A-2P - 17.3-18.1GHz 2W Internally Matched Power FET
EIB1718A-1P - Internally Matched Power FET
EIB1718A-1P - 17.3-18.7GHz 1W Internally Matched Power FET
EIB1718-1P - Internally Matched Power FET
EIB1718-1P - 17.7-18.7GHz 1W Internally Matched Power FET
EIB1718-2P - Internally Matched Power FET
EIB1718-2P - 17.7-18.7GHz Internally Matched Power FET
EIB1011-2P - Internally Matched Power FET

Full PDF Text Transcription

Click to expand full text

Excelics • • • • • • 17.3-18.1GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 25% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33.5/+32.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 7.5/5.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1718A-2P Not recommended for new designs. Contact factory. Effective 03/2003 17.3-18.1GHz, 2W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1718A-2P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=17.3-18.1GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Gain at 1dB Compression f=17.3-18.1GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Power Added Efficiency at 1dB compression f=17.3-18.1GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.

Published: Nov 20, 2009 |