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EIC0910-25 - 9.50-10.50 GHz 25-Watt Internally Matched Power FET

Key Features

  • 9.50.
  • 10.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +44 dBm Output Power at 1dB Compression 7 dB Power Gain at 1dB Compression 30% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH 0.945 0.803 Excelics EIC0910-25 0.024 0.580 YYWW SN 0.315 0.685 0.010 0.158 0.617 0.004 0.055 0.095 0.055 0.168.

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Datasheet Details

Part number EIC0910-25
Manufacturer Excelics Semiconductor
File Size 168.68 KB
Description 9.50-10.50 GHz 25-Watt Internally Matched Power FET
Datasheet download datasheet EIC0910-25 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com EIC0910-25 9.50-10.50 GHz 25-Watt Internally Matched Power FET 2X 0.079 MIN 4X 0.102 FEATURES • • • • • • • 9.50 – 10.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +44 dBm Output Power at 1dB Compression 7 dB Power Gain at 1dB Compression 30% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH 0.945 0.803 Excelics EIC0910-25 0.024 0.580 YYWW SN 0.315 0.685 0.010 0.158 0.617 0.004 0.055 0.095 0.055 0.168 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH 1. Caution! ESD sensitive device. MIN 43 6 PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 5000mA Gain at 1dB Compression f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 5000mA Gain Flatness f = 9.