EIC0910-4 Datasheet | Excelics Semiconductor

FEATURES - - - - - - - 9.50- 10.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 d Bm Output Power at 1d B pression 7.5 d B Power Gain at 1d B pression 30% Power Added Efficiency -46 d Bc IM3 at PO = 25.5 d Bm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 1100m A Gain at 1d B pression f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 1100m A Gain Flatness f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 1100m A Power Added Efficiency at 1d B pression VDS = 10 V, IDSQ ≈ 1100m A f = 9.50-10.50GHz Drain Current at 1d B pression f = 9.50-10.50GHz Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 25.5 d Bm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 10.50GHz Saturated Drain Current VDS = 3 V, VGS = 0 V Pinch-off Voltage Thermal Resistance Caution! ESD sensitive device. MIN 35.5 6.5 TYP 36.5 7.5 ±0.6 30 1200 -43 -46 2000 -2.5 5.5 2500 -4.0 6.0 o UNITS d Bm d B d B % 1300 m A d Bc m A V C/W VDS = 3 V, IDS = 20 m A Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING FOR EFE SYMBOLS PARAMETERS ABSOLUTE1 15V -5V 48m A -9.6m A 36d Bm 175C -65C to +175C 25W CONTINUOUS2 10V -4V 14.4m A -2.4m A @ 3d B pression 175C -65C to +175C 25W Vds Vgs Igf Igr Pin Tch Tstg Pt Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: .excelics. page 1 of 4 Revised October 2007 .. UPDATED 08/21/2007 9.50-10.50GHz...