EIC0910-25 - 9.50-10.50 GHz 25-Watt Internally Matched Power FET

Excelics Semiconductor

Key Features

9.50.
10.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +44 dBm Output Power at 1dB Compression 7 dB Power Gain at 1dB Compression 30% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH 0.945 0.803 Excelics EIC0910-25 0.024 0.580 YYWW SN 0.315 0.685 0.010 0.158 0.617 0.004 0.055 0.095 0.055 0.168.

EIC0910-25 9.50-10.50 ghz 25-watt internally matched power fet by Excelics Semiconductor - Datasheet Preview

Datasheet Details

Part number	EIC0910-25
Manufacturer	Excelics Semiconductor
File Size	168.68 KB
Description	9.50-10.50 GHz 25-Watt Internally Matched Power FET
Datasheet	EIC0910-25 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer

Other Datasheets by Excelics Semiconductor

Part Number	Description
EIC0910-2	Internally Matched Power FET
EIC0910-12	9.50-10.50 GHz 12-Watt Internally Matched Power FET
EIC0910-4	Internally Matched Power FET
EIC0910-5	Internally Matched Power FET
EIC0910-8	Internally Matched Power FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

www.DataSheet4U.com EIC0910-25 9.50-10.50 GHz 25-Watt Internally Matched Power FET 2X 0.079 MIN 4X 0.102 FEATURES • • • • • • • 9.50 – 10.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +44 dBm Output Power at 1dB Compression 7 dB Power Gain at 1dB Compression 30% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH 0.945 0.803 Excelics EIC0910-25 0.024 0.580 YYWW SN 0.315 0.685 0.010 0.158 0.617 0.004 0.055 0.095 0.055 0.168 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH 1. Caution! ESD sensitive device. MIN 43 6 PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 5000mA Gain at 1dB Compression f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 5000mA Gain Flatness f = 9.