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EIC0910-5
ISSUED DATE: 04-19-04
9.50-10.50GHz, 5W Internally Matched Power FET
• • • • • 9.50-10.50 GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE: 30% TYPICAL +37.5 dBm TYPICAL P1dB OUTPUT POWER 7dB TYPICAL G1dB POWER GAIN HERMETIC METAL FLANGE PACKAGE
SN
Excelics
EIC0910-5
YM
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
EIC0910-5 SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=9.5-10.5GHz, Vds=10V, Idsq=1600mA Gain at 1dB Compression f=9.5-10.5GHz, Vds=10V, Idsq=1600mA Gain Flatness f = 9.5-10.5GHz, Vds = 10 V, Idsq = 1600mA Power Added Efficiency at 1dB compression f=9.5-10.5GHz, Vds=10V, Idsq=1600mA Drain Current at 1dB Compression Output 3rd Order Intermodulation Distortion f=10.5GHz ∆f=10MHz 2-Tone Test. Pout=26.5 dBm S.