EIC0910-5 Datasheet | Excelics Semiconductor

.. ISSUED DATE: 04-19-04 9.50-10.50GHz, 5W Internally Matched Power FET - - - - - 9.50-10.50 GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE: 30% TYPICAL +37.5 d Bm TYPICAL P1d B OUTPUT POWER 7d B TYPICAL G1d B POWER GAIN HERMETIC METAL FLANGE PACKAGE Excelics ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIC0910-5 SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1d B pression f=9.5-10.5GHz, Vds=10V, Idsq=1600m A Gain at 1d B pression f=9.5-10.5GHz, Vds=10V, Idsq=1600m A Gain Flatness f = 9.5-10.5GHz, Vds = 10 V, Idsq = 1600m A Power Added Efficiency at 1d B pression f=9.5-10.5GHz, Vds=10V, Idsq=1600m A Drain Current at 1d B pression Output 3rd Order Intermodulation Distortion f=10.5GHz ∆f=10MHz 2-Tone Test. Pout=26.5 d Bm S.C.L Ids @ 65% Idss Saturated Drain Current Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=30m A MIN 36.5 6 TYP 37.5 7 ±0.6 30 1700 1900 MAX UNIT d Bm d B d B % m A d Bc -43 -46 2900 -2.5 5.0 3500 -4 5.5 o P1d B G1d B ∆G PAE Id1d B IM3 Idss Vp Rth m A V C/W Thermal Resistance (Au-Sn Eutectic Attach) ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION AT 25°C SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation CONTINUOUS1,2 10V -4.5V Idss 60m A @ 3d B pression 150 o C -65 to +150 o C 23W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web:...