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EIC0910-2 - Internally Matched Power FET

Key Features

  • 9.50.
  • 10.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.5 dBm Output Power at 1dB Compression 8.0 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at Po = 22.5 dBm SCL 100% Tested for DC, RF, and RTH.

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Datasheet Details

Part number EIC0910-2
Manufacturer Excelics Semiconductor
File Size 212.89 KB
Description Internally Matched Power FET
Datasheet download datasheet EIC0910-2 Datasheet

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com EIC0910-2 UPDATED 08/21/2007 9.50-10.50GHz 2-Watt Internally-Matched Power FET FEATURES • • • • • • • 9.50 –10.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.5 dBm Output Power at 1dB Compression 8.0 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at Po = 22.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 550mA Gain at 1dB Compression f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 550mA Gain Flatness f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 550mA Power Added Efficiency at 1dB Compression f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 550mA Drain Current at 1dB Compression f = 9.