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EIC8596-12 - Internally Matched Power FET

Key Features

  • 8.50.
  • 9.60GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 34% Power Added Efficiency -46 dBc IM3 at PO = 30.5 dBm SCL 100% Tested for DC, RF, and RTH.

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Datasheet Details

Part number EIC8596-12
Manufacturer Excelics Semiconductor
File Size 126.97 KB
Description Internally Matched Power FET
Datasheet download datasheet EIC8596-12 Datasheet

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www.DataSheet4U.com EIC8596-12 UPDATED 07/25/2007 8.50-9.60 GHz 12-Watt Internally Matched Power FET FEATURES • • • • • • • 8.50– 9.60GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 34% Power Added Efficiency -46 dBc IM3 at PO = 30.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 3200mA Gain at 1dB Compression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 3200mA Gain Flatness f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 3200mA Power Added Efficiency at 1dB Compression f = 8.50-9.