EIC8596-15 - Internally Matched Power FET

Excelics Semiconductor

Key Features

8.50.
9.60GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +42.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 31% Power Added Efficiency -46 dBc IM3 at PO = 31.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL.

EIC8596-15 internally matched power fet by Excelics Semiconductor - Datasheet Preview

Datasheet Details

Part number	EIC8596-15
Manufacturer	Excelics Semiconductor
File Size	110.39 KB
Description	Internally Matched Power FET
Datasheet	EIC8596-15 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer

Other Datasheets by Excelics Semiconductor

Part Number	Description
EIC8596-12	Internally Matched Power FET
EIC8596-2	Internally Matched Power FET
EIC8596-4	Internally Matched Power FET
EIC8596-8	Internally Matched Power FET
EIC0910-12	9.50-10.50 GHz 12-Watt Internally Matched Power FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

www.DataSheet4U.com EIC8596-15 UPDATED 04/25/2006 8.50-9.60 GHz 15-Watt Internally Matched Power FET Excelics EIC8596-15 .827±.010 .669 .120 MIN FEATURES • • • • • • • • 8.50– 9.60GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +42.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 31% Power Added Efficiency -46 dBc IM3 at PO = 31.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 4500mA Gain at 1dB Compression f = 8.50-9.