Datasheet4U Logo Datasheet4U.com

EIC8596-15 - Internally Matched Power FET

Features

  • 8.50.
  • 9.60GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +42.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 31% Power Added Efficiency -46 dBc IM3 at PO = 31.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL.

📥 Download Datasheet

Datasheet preview – EIC8596-15

Datasheet Details

Part number EIC8596-15
Manufacturer Excelics Semiconductor
File Size 110.39 KB
Description Internally Matched Power FET
Datasheet download datasheet EIC8596-15 Datasheet
Additional preview pages of the EIC8596-15 datasheet.
Other Datasheets by Excelics Semiconductor

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com EIC8596-15 UPDATED 04/25/2006 8.50-9.60 GHz 15-Watt Internally Matched Power FET Excelics EIC8596-15 .827±.010 .669 .120 MIN FEATURES • • • • • • • • 8.50– 9.60GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +42.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 31% Power Added Efficiency -46 dBc IM3 at PO = 31.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 4500mA Gain at 1dB Compression f = 8.50-9.
Published: |