• Part: EID1112A1-5
  • Description: 11.70-12.70 GHz 5-Watt Internally Matched Power FET
  • Manufacturer: Excelics Semiconductor
  • Size: 108.11 KB
Download EID1112A1-5 Datasheet PDF
Excelics Semiconductor
EID1112A1-5
EID1112A1-5 is 11.70-12.70 GHz 5-Watt Internally Matched Power FET manufactured by Excelics Semiconductor.
.. UPDATED 07/12/2007 11.70-12.70 GHz 5-Watt Internally Matched Power FET Features - 11.70-12.70 GHz Bandwidth - Input/Output Impedance Matched to 50 Ohms - +37.5 dBm Output Power at 1dB pression - 8.0 dB Power Gain at 1dB pression - 35% Power Added Efficiency - Hermetic Metal Flange Package - 100% Tested for DC, RF, and RTH .060 MIN. Excelics YYWW SN .060 MIN. .650±.008 .512 GATE DRAIN .319 .022 .094 .382 .004 .129 .045 .070 ±.008 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL PARAMETERS/TEST CONDITIONS Output Power at 1dB pression f = 11.70-12.70GHz VDS = 10 V, IDSQ ≈ 1200mA Gain at 1dB pression f...