• Part: EID1112A1-8
  • Description: 11.70-12.70 GHz 8-Watt Internally Matched Power FET
  • Manufacturer: Excelics Semiconductor
  • Size: 109.11 KB
Download EID1112A1-8 Datasheet PDF
Excelics Semiconductor
EID1112A1-8
EID1112A1-8 is 11.70-12.70 GHz 8-Watt Internally Matched Power FET manufactured by Excelics Semiconductor.
.. UPDATED 07/12/2007 11.70-12.70 GHz 8-Watt Internally Matched Power FET Excelics .827±.010 .669 .120 MIN Features - 11.70-12.70 GHz Bandwidth - Input/Output Impedance Matched to 50 Ohms - +39.5 dBm Output Power at 1dB pression - 8.0 dB Power Gain at 1dB pression - 35% Power Added Efficiency - Hermetic Metal Flange Package - 100% Tested for DC, RF, and RTH .024 .421 YYWW .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL PARAMETERS/TEST CONDITIONS Output Power at 1dB pression f = 11.70-12.70GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB pression f...