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EID1112A1-8 - 11.70-12.70 GHz 8-Watt Internally Matched Power FET

Features

  • 11.70-12.70 GHz Bandwidth.
  • Input/Output Impedance Matched to 50 Ohms.
  • +39.5 dBm Output Power at 1dB Compression.
  • 8.0 dB Power Gain at 1dB Compression.
  • 35% Power Added Efficiency.
  • Hermetic Metal Flange Package.
  • 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL.

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Datasheet preview – EID1112A1-8

Datasheet Details

Part number EID1112A1-8
Manufacturer Excelics Semiconductor
File Size 109.11 KB
Description 11.70-12.70 GHz 8-Watt Internally Matched Power FET
Datasheet download datasheet EID1112A1-8 Datasheet
Additional preview pages of the EID1112A1-8 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com EID1112A1-8 UPDATED 07/12/2007 11.70-12.70 GHz 8-Watt Internally Matched Power FET Excelics EID1112A1-8 .827±.010 .669 .120 MIN FEATURES • 11.70-12.70 GHz Bandwidth • Input/Output Impedance Matched to 50 Ohms • +39.5 dBm Output Power at 1dB Compression • 8.0 dB Power Gain at 1dB Compression • 35% Power Added Efficiency • Hermetic Metal Flange Package • 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f = 11.70-12.70GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 11.70-12.70GHz VDS = 10 V, IDSQ ≈ 2200mA Gain Flatness f = 11.70-12.
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