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EID1314A1-8 - 13.75-14.50 GHz 8-Watt Internally-Matched Power FET

Description

The EID1314A1-8 is a high power, highly linear, single stage MFET amplifier in a flange mount package.

Features

  • 13.75-14.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 27% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH.

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Datasheet Details

Part number EID1314A1-8
Manufacturer Excelics Semiconductor
File Size 189.73 KB
Description 13.75-14.50 GHz 8-Watt Internally-Matched Power FET
Datasheet download datasheet EID1314A1-8 Datasheet

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www.DataSheet4U.com EID1314A1-8 UPDATED 07/12/2007 13.75-14.50 GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • • 13.75-14.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 27% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH DESCRIPTION The EID1314A1-8 is a high power, highly linear, single stage MFET amplifier in a flange mount package. This amplifier features Excelics’ unique PHEMT transistor technology. Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 13.
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