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EID1314A1-8 Datasheet Preview

EID1314A1-8 Datasheet

13.75-14.50 GHz 8-Watt Internally-Matched Power FET

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UPDATED 07/12/2007
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EID1314A1-8
13.75-14.50 GHz 8-Watt Internally-Matched Power FET
FEATURES
13.75-14.50 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.5 dBm Output Power at 1dB Compression
6.5 dB Power Gain at 1dB Compression
27% Power Added Efficiency
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
DESCRIPTION
The EID1314A1-8 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics’ unique
PHEMT transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
G1dB
G
PAE
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 13.75-14.50GHz
VDS = 10 V, IDSQ 2200mA
Gain at 1dB Compression
f = 13.75-14.50GHz
VDS = 10 V, IDSQ 2200mA
Gain Flatness
f = 13.75-14.50GHz
VDS = 10 V, IDSQ 2200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 2200mA
f = 13.75-14.50GHz
Id1dB
Drain Current at 1dB Compression f = 13.75-14.50GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
VDS = 3 V, IDS = 40 mA
RTH Thermal Resistance2
Notes:
1. Tested with 100 Ohm gate resistor.
2. Overall Rth depends on case mounting.
MIN
38.5
5.5
TYP
39.5
6.5
27
2800
4200
-1.2
3.5
MAX
UNITS
dBm
dB
±0.6 dB
%
3600 mA
5760 mA
-2.5 V
4.0 oC/W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised July 2007




Excelics Semiconductor

EID1314A1-8 Datasheet Preview

EID1314A1-8 Datasheet

13.75-14.50 GHz 8-Watt Internally-Matched Power FET

No Preview Available !

www.DataSheet4U.com
UPDATED 07/12/2007
EID1314A1-8
13.75-14.50 GHz 8-Watt Internally-Matched Power FET
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
CHARACTERISTIC
VALUE
VDS Drain to Source Voltage
10 V
VGS Gate to Source Voltage
-4.5 V
IDS Drain Current
IDSS
IGSF Forward Gate Current
80 mA
PIN Input Power
@ 3dB compression
PT Total Power Dissipation
35 W
TCH Channel Temperature
150°C
TSTG
Storage Temperature
-65/+150°C
Notes:
1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2. Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package, and
PT = (VDS * IDS) – (POUT – PIN).
PERFORMANCE DATA
Typical S-Parameters (T= 25°C, 50system, de-embedded to edge of package)
VDS = 10 V, IDSQ 2200mA
S11 and S22
Swp Max
15GHz
20
S21 and S12
-3.0
-4.0
-5.0
-10.0
-0.2
3.0
4.0
5.0
10.0
0.2
10
0
-10
-20
DB(|S[2,1]|) *
EID1314-8
DB(|S[1,2]|) *
EID1314-8
FREQ
(GHz)
13.0
13.2
13.4
13.6
13.8
14.0
14.2
14.4
14.6
14.8
15.0
-0.4 S[1,1] *
EID1314-8
S[2,2] *
EID1314-8
0.4
Swp Min
13GHz
-30
13
--- S11 ---
MAG
ANG
0.574
-98.65
-0.5306 113.08
-0.4774 128.57
-0.4077 145.55
-0.3254 166.06
0.2373
168.69
0.1656
132.83
0.1325
86.1
0.1456
41.09
0.1724
9.26
0.1868
-16
--- S21 ---
MAG
ANG
2.0849 -178.44
2.2429
166.32
2.4099
150.05
2.5516
132.84
2.691
114.68
2.7742
95.48
2.7922
76.3
2.747
57.12
2.6903
38.72
2.5955
20.97
2.498
3.35
13.5 14 14.5
Frequency (GHz)
15
--- S12 ---
MAG
ANG
0.038
168.62
0.0413
154.22
0.0467
135.32
0.0504
118.29
0.0542
97.21
0.0561
76.29
0.061
55.52
0.0615
37.32
0.061
15.7
0.0602
-2.53
0.0599
-21.47
--- S22 ---
MAG
ANG
0.622
-159.14
0.5702 -170.72
0.5086
175.71
0.4354
159.24
0.3624
138.73
0.299
111.82
0.2647
80.39
0.2747
48.13
0.3018
23.52
0.3389
4.09
0.3695
-11.37
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 4
Revised July 2007


Part Number EID1314A1-8
Description 13.75-14.50 GHz 8-Watt Internally-Matched Power FET
Maker Excelics Semiconductor
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EID1314A1-8 Datasheet PDF





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